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Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Journal Article · · CPSS Transactions on Power Electronics and Applications
 [1];  [1]
  1. Univ. of Tennessee, Knoxville, TN (United States). CURENT & the Dept. of Electrical Engineering and Computer Science
This article overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1399420
Journal Information:
CPSS Transactions on Power Electronics and Applications, Journal Name: CPSS Transactions on Power Electronics and Applications Journal Issue: 1 Vol. 1; ISSN 2475-742X
Country of Publication:
United States
Language:
English

Cited By (3)

CoW metallization for high strength bonding to both sintered Ag joints and encapsulation resins journal May 2019
Development of electrical enhanced photocatalysis polishing slurry for silicon carbide wafer journal August 2019
Hybrid PWM Strategy for Power Efficiency Improvement of 5-Level TNPC Inverter and Current Distortion Compensation Method journal January 2019

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